savantic semiconductor product specification silicon npn power transistors 2SD2348 d escription with to-3p(h)is package built-in damper diode high voltage ,high speed low saturation voltage applications horizontal deflection output for color tv pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 600 v ebo emitter-base voltage open collector 5 v i c collector current 8 a i cm collector current-peak 16 a i b base current 4 a p c collector power dissipation t c =25 50 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3p(h)is) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SD2348 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo emitter-base breakdown voltage i e =300ma , i c =0 5 v v cesat collector-emitter saturation voltage i c =6a ;i b =1.2a 5.0 v v besat base-emitter saturation voltage i c =6a ;i b =1.2a 1.5 v i cbo collector cut-off current v cb =1500v; i e =0 1 ma i ebo emitter cut-off current v eb =5v; i c =0 83 250 ma h fe-1 dc current gain i c =1a ; v ce =5v 10 h fe-2 dc current gain i c =6a ; v ce =5v 6 9 f t transition frequency i c =0.1a ; v ce =10v 1 3 mhz c ob collector output capacitance i e =0 ; v cb =10v;f=1mhz 170 pf v f diode forward voltage i f =6a 1.8 v t s storage time 12 s t f fall time i cp =6a ;i b1 =1.2a;f h =15.75khz 0.7 s
savantic semiconductor product specification 3 silicon npn power transistors 2SD2348 package outline fig.2 outline dimensions (unindicated tolerance: 0.15 mm)
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